دیتاشیت IXTQ26N50P

IXT(Q,T,V)26N50P/PS

مشخصات دیتاشیت

نام دیتاشیت IXT(Q,T,V)26N50P/PS
حجم فایل 388.05 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXT(Q,T,V)26N50P/PS

IXT(Q,T,V)26N50P/PS Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: PolarHV™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
  • detail: N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-3P